首頁(yè) >IRF1104STRL-LF>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyLogic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
SwitchingModePowerSupply | ISOCOMISOCOM COMPONENTS 英國(guó)安數(shù)光 | ISOCOM | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedUniversalSerialBustransceiver Generaldescription TheISP1104UniversalSerialBus(USB)transceiveriscompliantwiththeUniversalSerialBusSpecificationRev.2.0.TheISP1104cantransmitandreceiveUSBdataatfull-speed(12Mbit/s).ItallowssingleanddifferentialinputmodesselectablebyaMODEinput. Features ■ | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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