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零件型號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF1010ZSPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF1010ZSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010ZSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFI1010

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=49A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010N

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=49A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFI1010NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR/U1010Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1010Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF1010NSTRLPBF

  • 功能描述：

    MOSFET MOSFT 55V 84A 11mOhm 80nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/IR
1907+
NA
1600
20年老字號,原裝優(yōu)勢長期供貨
 詢價
IR/VISHAY
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
24+
D2-PAK
4000
只做原廠渠道 可追溯貨源
 詢價
INFINEON/IR
13+
1600
TO-263-3 (D2PAK)
 詢價
Infineon(英飛凌)
24+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+
TO-263
7500
詢價
IR
2016+
TO-263
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
IR
17+
D2-PAK
6200
100%原裝正品現(xiàn)貨
 詢價
更多IRF1010NSTRLPBF供應(yīng)商 更新時間2025-7-28 11:20:00

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