首頁(yè)>IRFR/U1010Z>規(guī)格書(shū)詳情
IRFR/U1010Z中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
IRFR/U1010Z |
| 功能描述 | Advanced Process Technology |
| 文件大小 |
4.28522 Mbytes |
| 頁(yè)面數(shù)量 |
11 頁(yè) |
| 生產(chǎn)廠商 | KERSEMI |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-6 17:50:00 |
| 人工找貨 | IRFR/U1010Z價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRFR/U1010Z規(guī)格書(shū)詳情
描述 Description
Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
特性 Features
? Advanced Process Technology
? Ultra Low On-Resistance
? 175°C Operating Temperature
? Fast Switching
? Repetitive Avalanche Allowed up to Tjmax
