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首頁(yè) >IRF1010NSTR>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

IRF1010ZSPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF1010ZSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010ZSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFI1010

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=49A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010N

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=49A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFI1010NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR/U1010Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1010Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF1010NSTR

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-263
177
只做原廠(chǎng)渠道 可追溯貨源
 詢(xún)價(jià)
Infineon(英飛凌)
24+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
INFINEON/英飛凌
24+
D2PAK
10000
現(xiàn)貨,來(lái)電咨詢(xún)
 詢(xún)價(jià)
INFINEON/英飛凌
24+
D2PAK
12000
原裝正品 假一罰十
 詢(xún)價(jià)
INFINEON/英飛凌
25+
D2PAK
8800
公司只做原裝,詳情請(qǐng)來(lái)電咨詢(xún)
 詢(xún)價(jià)
INFINEON/英飛凌
25+
D2PAK
12000
原裝，請(qǐng)咨詢(xún)
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INFINEON/英飛凌
23+
D2PAK
88000
正規(guī)渠道,只有原裝!
 詢(xún)價(jià)
INFINEON/英飛凌
24+
D2PAK
88000
只做現(xiàn)貨
 詢(xún)價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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INTREC
23+
NA
640
專(zhuān)做原裝正品,假一罰百!
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更多IRF1010NSTR供應(yīng)商 更新時(shí)間2025-7-16 11:04:00

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