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IRF1010NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1010NPBF規(guī)格書詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF1010NPBF
- 功能描述：
MOSFET MOSFT 55V 72A 11mOhm 80nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
4500 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價 | ||
Infineon/英飛凌 |
24+ |
TO-220-3 |
8000 |
只做原裝，歡迎詢價，量大價優(yōu) |
詢價 | ||
INFINEON |
24+ |
con |
10 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格 |
詢價 | ||
Infineon/英飛凌 |
2022+ |
TO-220-3 |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
600 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/英飛凌 |
10+14+P |
TO-220 |
9 |
原裝進(jìn)口無鉛現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO220 |
10050 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
23+ |
TO-220 |
65400 |
詢價 | |||
IR |
24+ |
TO220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IR |
07+ |
原廠原裝 |
20000 |
自己公司全新庫存絕對有貨 |
詢價 |
