IRF1010N中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1010N規(guī)格書詳情
VDSS = 55V
RDS(on) = 11m?
ID = 85A?
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
產(chǎn)品屬性
- 型號：
IRF1010N
- 功能描述：
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
22+ |
TO-220 |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
23+ |
TO-220 |
65480 |
詢價 | ||||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
23+ |
TO-220 |
12800 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
24+ |
TO-220AB |
27500 |
原裝正品,價格最低! |
詢價 | ||
IR |
418H |
98 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
IR |
13+ |
TO-220 |
25 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
24+ |
D2-PAK |
5850 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
2025+ |
TO-220 |
5185 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 |
