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零件型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

IRC634

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRC634

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A);

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRC634PBF

MOSFET N-CH 250V 8.1A TO-220-5;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRC634PRF

HEXFET Power MOSFET

IRF

International Rectifier

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleli

IRF

International Rectifier

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF634

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    IRC634

  • 功能描述:

    MOSFET N-Chan 250V 8.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-2205-Pin(HEXSen
8866
詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-220-5
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IOR
21+
TO220
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
IR
23+
TO-220-5L
65480
詢價(jià)
IR
23+
TO-220-5
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
2022+
TO-220-5
12888
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
ir
24+
500000
行業(yè)低價(jià),代理渠道
詢價(jià)
更多IRC634供應(yīng)商 更新時(shí)間2025-7-28 16:30:00