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IRFR120ATM

AvalancheRuggedTechnology

IRFR120N

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFR120N

N-ChannelMOSFETTransistor

IRFR120N

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques.

Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

IRFR120N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

IRFR120NCLPBF

SurfaceMount(IRFR120N)

IRFR120NPBF

FastSwitching

VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

IRFR120NPBF

SurfaceMount(IRFR120N)StraightLead(IRFU120N)

VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

IRFR120NPBF

ADVANCEDPROCESSTECHNOLOGY

IRFR120NPBF

SurfaceMount(IRFR120N)