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首頁 >IPP65R660CFD>規(guī)格書列表

零件型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IPP65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650V CoolMOS CFD Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP65R660CFD	文件：4.46997 Mbytes Page：21 Pages	絲?。?a target="_blank" title="Marking" href="/65f6660/marking.html">65F6660；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFDA	文件：300 bytes Page：1 Pages	20V-650V汽車級MOSFET; ·First 650V automotive qualified technology with integrated fast body diode on the market\n ·Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n ·Low gate charge value Q g\n ·Low Q rr at repetitive commutation on body diode & lowQ oss\n ·Reduced turn on and turn of delay times\n ·Compliant to AEC Q101 standard\n; 650V CoolMOS? CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS? CFDA series provides now also an integrated fast body diode.	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：334.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤660m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPX65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

技術(shù)參數(shù)

RDS (on)?max：
660.0m?
QG?：
20.0nC?
VDS?max：
650.0V
ID ?max：
6.0A
RthJC?max：
2.0K/W
Ptot?max：
62.5W
IDpuls?max：
17.0A
VGS(th)?min?max：
3.5V?4.5V
Polarity?：
N
Rth?：
2.0K/W?
RthJA?max：
62.0K/W
Language?：
PSpice
Product Category?：
Power MOSFET HV CoolMOS?
Simulator?：
TINA
Encryption?：
no

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市坤融電子科技有限公司	IPP65R660CFD	INFINEON/英飛凌	24+	TO-220	2000	只做原廠渠道可追溯貨源	詢價(jià)
深圳市河鋒鑫科技有限公司	IPP65R660CFD	英飛翎	17+	TO-220	31518	原裝正品可含稅交易	詢價(jià)
深圳市鵬和科技有限公司	IPP65R660CFD	INFINEON	24+	TO-220	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市達(dá)恩科技有限公司	IPP65R660CFD	Infineon	24+	NA	3315	進(jìn)口原裝正品優(yōu)勢供應(yīng)	詢價(jià)
深圳市華來深電子有限公司	IPP65R660CFD	INFINEON	23+	TO-220	11846	一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市納立科技有限公司	IPP65R660CFD		三年內(nèi)		1983	只做原裝正品	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IPP65R660CFD	INFINEON	20+	TO-220	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IPP65R660CFD	NEXPERIA/安世	23+	SOT669	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
深圳市正納電子有限公司	IPP65R660CFD	Infineon(英飛凌)	23+	NA	20094	正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	IPP65R660CFD	INFINEON	21+	TO-220	10000	原裝現(xiàn)貨假一罰十	詢價(jià)

更多IPP65R660CFD供應(yīng)商更新時(shí)間2025-7-28 16:36:00

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