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IPW65R660CFD

650V CoolMOS CFD Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R660CFD

絲印：65F6660；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R660CFD

N-Channel MOSFET Transistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤660m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW65R660CFD

500V-900V CoolMOS? N-Channel Power MOSFET; ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢:\n? Low switching losses due to low Qrr at repetitive commutation on body diode\n? Self limiting di/dt and dv/dt\n? Low Qoss\n? Reduced turn on and turn of delay times\n? Outstanding CoolMOS? quality\n;

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • Package?：

    TO-247

  • VDS?max：

    650.0V

  • RDS (on)?max：

    660.0m?

  • Polarity?：

    N

  • ID ?max：

    6.0A

  • Ptot?max：

    63.0W

  • IDpuls?max：

    17.0A

  • VGS(th)?min?max：

    3.5V?4.5V

  • QG?：

    22.0nC?

  • Rth?：

    2.0K/W?

  • RthJC?max：

    2.0K/W

  • RthJA?max：

    62.0K/W

  • Operating Temperature?min：

    -55.0°C?

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
7073
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
 詢價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
INFINEON/英飛凌
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON
21+
TO247
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
INFINEON/英飛凌
2022+
TO-247
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
INFINEON/英飛凌
23+
TO247
9990
原裝正品，支持實(shí)單
 詢價(jià)
INFINEON
1237+
TO247
7730
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON
原廠封裝
1000
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
 詢價(jià)
INFINEON/英飛凌
23+
TO247
11220
英飛凌優(yōu)勢原裝IC,高效BOM配單。
 詢價(jià)
更多IPW65R660CFD供應(yīng)商 更新時(shí)間2025-7-28 9:38:00

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