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IPB65R280E6

650V CoolMOS E6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R280E6

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB65R280E6

500V-900V CoolMOS? N-Channel Power MOSFET; ? 易于控制開關(guān)行為\n? 非常高的換流堅(jiān)固性\n? 由于非常低的優(yōu)質(zhì)系數(shù)(R DS(ON)*Q g) 和 E oss),因此損耗極低\n? 使用簡(jiǎn)便\n? 與 C3 相比,具有更高的輕載效率\n? 出色的可靠性和經(jīng)過實(shí)踐驗(yàn)證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比,性價(jià)比更高\(yùn)n? 更高效、更緊湊、重量更輕、溫度更低 \n \n\n優(yōu)勢(shì):\n? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開關(guān)拓?fù)渲惺褂肻n? 提高輕載效率\n? 提高在硬開關(guān)應(yīng)用中的效率\n? 改進(jìn)了易用性\n? 減輕可能因?yàn)?PCB 布局和封裝寄生效應(yīng)而引發(fā)的振蕩\n;

?CoolMOS? E6 結(jié)合了英飛凌作為業(yè)內(nèi)領(lǐng)先的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗(yàn)與其先進(jìn)的創(chuàng)新技術(shù)所提供的器件具備了快速開關(guān) SJ MOSFET 的所有優(yōu)點(diǎn),同時(shí)又不犧牲易用性。很低的開關(guān)和通態(tài)損耗使開關(guān)應(yīng)用更高效,結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ?\n ? 600V CoolMOS? E6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? E6 可替代 650V CoolMOS? C3 \n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R280E6

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI65R280E6

650VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R280E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP65R280E6

650VCoolMOSE6PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R280E6

650VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R280E6

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤280m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW65R280E6

650VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • Package?:

    D2PAK (TO-263)

  • VDS?max:

    650.0V

  • RDS (on)?max:

    280.0m?

  • Polarity?:

    N

  • ID ?max:

    13.8A

  • Ptot?max:

    104.0W

  • IDpuls?max:

    39.0A

  • VGS(th)?min?max:

    2.5V?3.5V

  • QG?:

    45.0nC?

  • Rth?:

    1.2K/W?

  • RthJC?max:

    1.2K/W

  • RthJA?max:

    62.0K/W

  • Operating Temperature?min:

    -55.0°C?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon(英飛凌)
24+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
INFINE0N
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
JINGDAO/晶導(dǎo)微
23+
SMA
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
Infineon
22+
D2PAK(TO-263)
6000
十年配單,只做原裝
詢價(jià)
Infineon
23+
D2PAK(TO-263)
6000
原裝正品,支持實(shí)單
詢價(jià)
INFINEON
原廠封裝
1000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
Infineon
22+
D2PAK(TO-263)
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
Infineon Technologies
23+
原裝
8000
只做原裝現(xiàn)貨
詢價(jià)
Infineon Technologies
23+
原裝
7000
詢價(jià)
INFINEON
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價(jià)
更多IPB65R280E6供應(yīng)商 更新時(shí)間2025-7-28 16:12:00