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IHW40N120R3

IGBT

DESCRIPTION ·Verytightparameterdistribution ·LowVCEsat ·LowEMI APPLICATIONS ·IndustrialPowerSupplies ·Inductivecooking ·Softswitchingapplications

IHW40N120R3

分立式IGBT; ? Best-in-class conduction properties in VCEsatand Vf\n? Lowest switching losses, highest efficiency\n? Excellent thermal behavior\n? Tj(max)= 175°C\n? Soft current turn-off waveforms for low EMI\n\n優(yōu)勢:\n? Lowest power dissipation\n? Better thermal management\n? Surge current capability for lower EMI filtering requirements\n? Reduced system costs\n? Highest reliability against peak currents\n;

The 3rd?generation of reverse conducting 1200 V, 40 A TRENCHSTOP? RC-IGBT3?with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.\n

IHW40N120R3

Reverse conducting IGBT with monolithic body diode

IHW40N120R3FKSA1

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 80A 429W TO247-3