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MTH6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM6N60

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM6N60

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP6N60

N-ChannelMosfetTransistor

DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP6N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP6N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N60E

TMOSPOWERFET6.0AMPERES600VOLTSRDS(on)=1.2OHMS

TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HY6N60T

  • 制造商：

    HY

  • 制造商全稱(chēng)：

    HY ELECTRONIC CORP.

  • 功能描述：

    600V/6.0A N-Channel Enhancement Mode MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
N/A
56000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
HUAYING
2447
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
HY
24+
DIP
8766
詢(xún)價(jià)
HY
20+
DIP
88720
紅外全新原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
HongKong
23+
接近反射式
39276
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢(xún)價(jià)
AF
23+
SOT-23
122212
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
HanElectricity(瀚源)
23+
-
2445
原裝現(xiàn)貨/專(zhuān)做開(kāi)關(guān)15年
 詢(xún)價(jià)
HOOYI
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
 詢(xún)價(jià)
HOOYI
23+
TO-251
6800
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
HOOYI
23+
TO-251
6800
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
更多HY6N60T供應(yīng)商 更新時(shí)間2025-7-26 11:06:00

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