首頁>HY27UF081G2M-VIB>規(guī)格書詳情
HY27UF081G2M-VIB中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- HY27UF081G2M-V
- HY27UF081G2M-TPIB
- HY27UF081G2M-TMS
- HY27UF081G2M-TPCP
- HY27UF081G2M-TPEP
- HY27UF081G2M-VCS
- HY27UF081G2M-VEP
- HY27UF081G2M-TPMP
- HY27UF081G2M-VEB
- HY27UF081G2M-TPCS
- HY27UF081G2M-VCB
- HY27UF081G2M-TPMS
- HY27UF081G2M-TIS
- HY27UF081G2M-TPIS
- HY27UF081G2M-TPIP
- HY27UF081G2M-TPEB
- HY27UF081G2M-TMB
- HY27UF081G2M-VES
HY27UF081G2M-VIB規(guī)格書詳情
SUMMARY DESCRIPTION
The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
產(chǎn)品屬性
- 型號：
HY27UF081G2M-VIB
- 制造商：
HYNIX
- 制造商全稱：
Hynix Semiconductor
- 功能描述：
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HY |
25+ |
SSOP |
996880 |
只做原裝,歡迎來電資詢 |
詢價 | ||
HY |
07+ |
TSSOP4 |
3600 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
HYNIX |
829+ |
TSOP48 |
196 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
HUNIX |
2016+ |
TSOP |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
Skhynix |
1844+ |
TSOP |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
HY |
22+ |
TSOP |
2000 |
原裝正品現(xiàn)貨 |
詢價 | ||
HYNIX/海力士 |
24+ |
TSSOP48 |
39197 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
HYNIX |
24+ |
SMD |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 | ||
HY |
23+ |
SSOP |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價 | ||
HYNIX(海力士) |
21+ |
SSOP |
12588 |
原裝正品,量大可定 |
詢價 |
