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IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310PBF

HEXFET?PowerMOSFET

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE310

HEXFETTRANSISTOR

400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka

IRF

International Rectifier

IRFE310

SimpleDriveRequirements

IRF

International Rectifier

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF310

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea

IRF

International Rectifier

IRFF310

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    HWFR-B310

  • 制造商:

    LUMILEDS

  • 制造商全稱:

    LUMILEDS

  • 功能描述:

    Lumileds P3 Series TS AlInGaP Chips

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
LUMILEDS
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
Lumiled
24+
原廠封裝
20000
原裝現(xiàn)貨假一罰十
詢價(jià)
63
全新原裝 貨期兩周
詢價(jià)
2022+
59
全新原裝 貨期兩周
詢價(jià)
SHINDENG
23+
模塊
350
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
詢價(jià)
原廠
2023+
模塊
600
專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨
詢價(jià)
SHINDENGE
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
SHINDENGE
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
WISOL/威盛
24+
SMD
22055
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
HITACHI
1922+
NA
35689
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
詢價(jià)
更多HWFR-B310供應(yīng)商 更新時(shí)間2025-7-28 9:07:00