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首頁(yè)>HUF75329P3>規(guī)格書(shū)詳情

HUF75329P3中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HUF75329P3
廠商型號(hào)

HUF75329P3

功能描述

49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

文件大小

173.94 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-11 15:48:00

人工找貨

HUF75329P3價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

HUF75329P3規(guī)格書(shū)詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

特性 Features

? 49A, 55V

? Ultra Low On-Resistance, rDS(ON) = 0.024?

? Temperature Compensating PSPICE? and SABER? Models

- Available on the web at: www.Intersil.com

? Thermal Impedance PSPICE and SABER Models

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF75329P3

  • 功能描述:

    MOSFET 20a 55V N-Channel UltraFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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