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首頁>HGTP3N60B3D>規(guī)格書詳情

HGTP3N60B3D中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書

HGTP3N60B3D
廠商型號

HGTP3N60B3D

功能描述

7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

154.31 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-17 9:16:00

人工找貨

HGTP3N60B3D價格和庫存,歡迎聯(lián)系客服免費人工找貨

HGTP3N60B3D規(guī)格書詳情

The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192.

特性 Features

? 7A, 600V TC = 25°C

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode

? Related Literature

? TB334 “Guidelines for Soldering Surface Mount

??? - Components to PC Boards

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