| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L Features ?Typ.RDS(on)=29m@VGS=18V ?UltraLowGateCharge(QG(tot)=107nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=106pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L Features ?Typ.RDS(on)=29m@VGS=18V ?UltraLowGateCharge(QG(tot)=107nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=106pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(on | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
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