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IRF1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF1104PBF

HEXFETPOWERMOSFET(VDSS=40V,RDS(on)=0.009廓,ID=100A)

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1104S

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRL1104

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104L

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104PBF

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

AdvancedProcessTechnologyLogic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    GHB-1104R-Y

  • 制造商：

    GILWAY

  • 制造商全稱：

    Gilway Technical Lamp

  • 功能描述：

    3.0x1.0 mm SMD CHIP LED LAMP

供應商型號品牌批號封裝庫存備注價格
GILWAY
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
Eaton / Control Automation
2022+
1
全新原裝 貨期兩周
 詢價
HJ
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價
更多GHB-1104R-Y供應商 更新時間2025-7-22 17:24:00

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