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首頁 >GAL16V8>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
GAL16V8D-7LJ	文件：767.57 Kbytes Page：26 Pages	All Devices Discontinued Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on 文件：767.57 Kbytes 頁數(shù)：26 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LJ	文件：316 Kbytes Page：22 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE 文件：316 Kbytes 頁數(shù)：22 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LJI	文件：316 Kbytes Page：22 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE 文件：316 Kbytes 頁數(shù)：22 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LJI	文件：767.57 Kbytes Page：26 Pages	All Devices Discontinued Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on 文件：767.57 Kbytes 頁數(shù)：26 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LJN	文件：767.57 Kbytes Page：26 Pages	All Devices Discontinued Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on 文件：767.57 Kbytes 頁數(shù)：26 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LJNI	文件：767.57 Kbytes Page：26 Pages	All Devices Discontinued Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on 文件：767.57 Kbytes 頁數(shù)：26 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LP	文件：767.57 Kbytes Page：26 Pages	All Devices Discontinued Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on 文件：767.57 Kbytes 頁數(shù)：26 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LP	文件：316 Kbytes Page：22 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE 文件：316 Kbytes 頁數(shù)：22 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LPI	文件：316 Kbytes Page：22 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE 文件：316 Kbytes 頁數(shù)：22 Pages	Lattice 萊迪思	Lattice
GAL16V8D-7LPI	文件：767.57 Kbytes Page：26 Pages	All Devices Discontinued Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on 文件：767.57 Kbytes 頁數(shù)：26 Pages	Lattice 萊迪思	Lattice

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技術(shù)參數(shù)

延遲時(shí)間 tpd（1）最大值：
10ns
電源電壓 - 內(nèi)部：
4.75 V ~ 5.25 V
宏單元數(shù)：
8
工作溫度：
0°C ~ 75°C（TA）
安裝類型：
通孔
封裝/外殼：
20-DIP（0.300\，7.62mm）
供應(yīng)商器件封裝：
20-PDIP

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市金華微盛電子有限公司	GAL16V8	LATTICE	19+	DIP	8000		詢價(jià)
深圳市一線半導(dǎo)體有限公司	GAL16V8	Lattice	24+	DIP-20	150		詢價(jià)
深圳市富誠威科技有限公司	GAL16V8	GAL	24+	PLCC	2560	絕對原裝!現(xiàn)貨熱賣!	詢價(jià)
深圳市福田區(qū)綠盛電子商行	GAL16V8	NS	2015+	DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市永貝爾科技有限公司	GAL16V8	LATTICE	23+	NA	25060	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	GAL16V8	LATTICE	22+	PLCC	2000	進(jìn)口原裝!現(xiàn)貨庫存	詢價(jià)
深圳市佳鑫美電子科技有限公司	GAL16V8		24+	DIP20	3629	原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!	詢價(jià)
深圳市宇集芯電子有限公司	GAL16V8	AMD	24+	DIP16	90000	一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理	詢價(jià)
上海凌岳電子科技有限公司（上海涵恩科技）	GAL16V8		2023+	DIP	3000	進(jìn)口原裝現(xiàn)貨	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	GAL16V8	N/A	23+		80000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)

更多GAL16V8供應(yīng)商更新時(shí)間2025-8-12 16:04:00

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