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High Performance E2CMOS PLD Generic Array Logic

Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE

文件：316 Kbytes 頁數(shù)：22 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE

文件：316 Kbytes 頁數(shù)：22 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times ( Features ?HIGH PERFORMANCE

文件：316 Kbytes 頁數(shù)：22 Pages

Lattice

萊迪思

All Devices Discontinued

Features ?HIGH PERFORMANCE E2CMOS?TECHNOLOGY —3.5 ns Maximum Propagation Delay —Fmax = 250 MHz —3.0 ns Maximum from Clock Input to Data Output —UltraMOS? Advanced CMOS Technology ?50 to 75 REDUCTION IN POWER FROM BIPOLAR —75mA Typ Icc on Low Power Device —45mA Typ Icc on

文件：767.57 Kbytes 頁數(shù)：26 Pages

Lattice

萊迪思