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G7

型號(hào)：BAW56QB；Package：SOT8015；Dual common anode high-speed switching diode

1.Generaldescription Dualcommonanodehigh-speedswitchingdiodeencapsulatedinaleadlessultrasmall DFN1110D-3(SOT8015)Surface-MountedDevice(SMD)plasticpackagewithvisibleand solderablesidepads. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowleakagecurr

G7

型號(hào)：BAW56QB-Q；Package：SOT8015；Dual common anode high-speed switching diode

1.Generaldescription Dualcommonanodehigh-speedswitchingdiodeencapsulatedinaleadlessultrasmall DFN1110D-3(SOT8015)Surface-MountedDevice(SMD)plasticpackagewithvisibleand solderablesidepads. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowleakagecurr

G7

型號(hào)：BZD27C120P；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

G7

型號(hào)：BZD27C120P；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

G7

型號(hào)：BZT52H-A8V2；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1%,±2%andapproximately±5% ?Wideworkingvoltagera

G7

型號(hào)：BZT52H-A8V2-Q；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1%,±2%andapproximately±5% ?Wideworkingvoltagera

G7

型號(hào)：NC7SV34L6X；Package：MicroPak；TinyLogic ULP-A Buffer

TheNC7SV34isasingleBufferintinyfootprintpackages.The deviceisdesignedtooperateforVCC=0.9Vto3.6V. Features ?Designedfor0.9Vto3.6VVCCOperation ?1.4nstPDat3.3V(Typ) ?Inputs/OutputsOver?VoltageTolerantupto3.6V ?IOFFSupportsPartialPowerDownProt

G7

型號(hào)：PBRN123YK；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

G7

型號(hào)：PESD5V0U5BV；Package：SOT666；Ultra low capacitance bidirectional fivefold ESD protection array

1.Generaldescription UltralowcapacitancebidirectionalfivefoldElectroStaticDischarge(ESD)protectionarrayinan ultrasmallandflatleadSOT666Surface-MountedDevice(SMD)plasticpackage,designedto protectuptofivesignallinesfromthedamagecausedbyESDandothertransients.

G7

型號(hào)：PMEG6010CEGW-Q；Package：SOD123；60 V, 1 A Low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotectionencapsulatedin smallSOD123Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Forwardcurrent:IF≤1A ?ReversevoltageVR≤60V ?Lowforwardvoltage,ty