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G2012

Marking：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description TheG2012usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ?Powerswitch ?DC/DCconverters

G2012A

Marking：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description TheG2012AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ?Powerswitch ?DC/DCconverters

G20N03D2

Marking：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET

Description TheG20N03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ?Powerswitch ?DC/DCconverters

G20N03K

Marking：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG20N03Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ? Powerswitch DC/DCconverters

G20N06D52

Marking：G20N06；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET

Description TheG20N06D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20P06K

Marking：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20P06KA

Marking：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20P10KE

Marking：G20P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

HGT1S20N60C3S

Marking：G20N60C3；Package：TO-263AB；45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

HGTG20N60C3

Marking：G20N60C3；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately