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TPRT9742CGJ5

Marking：G02；Package：SOT23-5；High-Side Power Switches with Flag

Features ?WideSupplyVoltageRange:2.5to5.5V ?ComplianttoUSBSpecifications ?Current-LimitandShort-CircuitProtections. ?EnableActiveLow/High ?TypicalRdson70mQ(SOT-23-5) ?ThermalShutdownProtection ?CurrentLimitingProtection ?HotPlug-InApplication(Soft

XC7SET02GV

Marking：g02；Package：SOT753；2-input NOR gate

1.Generaldescription XC7SET02isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputNORfunction. 2.Featuresandbenefits ?Symmetricaloutputimpedance ?Highnoiseimmunity ?Lowpowerdissipation ?Balancedpropagationdelays ?TTLinputlevels ?ESDprotection: ?HBMJESD22-A1

G020N03D5

Marking：G020N03；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG020N03D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G020N03K

Marking：G020N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG020N03Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G020N03T

Marking：G020N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description TheG020N03Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G02P06

Marking：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description TheG02P06usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G02P06A

Marking：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description TheG02P06Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications.AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

HYG022N03LQ1D

Marking：G022N03；Package：TO-252-2L；N-Channel Enhancement Mode MOSFET

HYG022N03LQ1U

Marking：G022N03；Package：TO-251-3L；N-Channel Enhancement Mode MOSFET

HYG022N03LQ1V

Marking：G022N03；Package：TO-251-3S；N-Channel Enhancement Mode MOSFET