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FSPYE234D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYE234D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs;

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

FSL234D1

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS234D1

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

詳細參數

  • 型號:

    FSPYE234D1

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FAIRCHILD
23+
NA
19960
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FSC
2016+
DIP8
3500
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FSC
24+
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5000
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FSC
1822+
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6852
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FAIRCHILD
24+
DIP-8
66800
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24+
DIP-8
6430
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FSC
24+
DIP8
65200
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FAIRCHILD/仙童
23+
DIP8
50000
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DIP8
23+
FAIRCHILD
50000
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FAIRCILD
22+
DIP-8
8000
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更多FSPYE234D1供應商 更新時間2025-7-28 11:49:00