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FSPYE234D1中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
FSPYE234D1 |
| 功能描述 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 文件大小 |
79.62 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | INTERSIL |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-14 14:48:00 |
| 人工找貨 | FSPYE234D1價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
FSPYE234D1規(guī)格書詳情
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have always featured.
特性 Features
? 9A, 250V, rDS(ON) = 0.215?
? UIS Rated
? Total Dose
??? - Meets Pre-RAD Specifications to 100K RAD (Si)
??? - Rated to 300K RAD (Si)
? Single Event
??? - Safe Operating Area Curve for Single Event Effects
??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
??? - Typically Survives 2E12 if Current Limited to IAS
? Photo Current
??? - 4.0nA Per-RAD (Si)/s Typically
? Neutron
??? - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
??? - Usable to 1E14 Neutrons/cm2
產(chǎn)品屬性
- 型號(hào)：
FSPYE234D1
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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