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MRF892

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMRF892isDesignedforClassAB,CellularBaseStationApplicationsupto900MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=8.5dBat14W/900MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

OPA892

OPA8922-GHz,10-V/VStable,0.95-nV/√Hz,Ultra-LowTHDOperationalAmplifier

1Features ?Ultra-low0.95-nV/√Hzvoltagenoise ?Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

OPA892

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features ?Ultra-low0.95nV/√Hzvoltagenoise ?Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

OPA892DR

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features ?Ultra-low0.95nV/√Hzvoltagenoise ?Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

OPA892DR

OPA8922-GHz,10-V/VStable,0.95-nV/√Hz,Ultra-LowTHDOperationalAmplifier

1Features ?Ultra-low0.95-nV/√Hzvoltagenoise ?Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

OPAX892

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features ?Ultra-low0.95nV/√Hzvoltagenoise ?Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

SIR892DP

N-Channel25-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?Low-SideMOSFETinSynchronousBuckdc-to-dc Converters -GameMachine

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIR892DP

N-Channel25-V(D-S)MOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

SIR892DP

N-Channel25-V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIS892ADN

N-Channel100V(D-S)MOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    FSM892D

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    5-PHASE STEPPING SYSTEMS

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更多FSM892D供應(yīng)商 更新時(shí)間2025-7-26 16:06:00

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