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OPA892DR

Marking：O892；OPA892 2-GHz, 10-V/V Stable, 0.95-nV/√Hz, Ultra-Low THD Operational Amplifier

1Features ?Ultra-low0.95-nV/√Hzvoltagenoise ?Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc

OPA892DR

Marking：O892；Package：SOIC；OPAx892 2GHz, 10V/V Stable, 0.95nV/√Hz, Ultra-Low THD Operational Amplifiers

1Features ?Ultra-low0.95nV/√Hzvoltagenoise ?Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

OPAX892

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features ?Ultra-low0.95nV/√Hzvoltagenoise ?Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) ?Stableatgains≥10V/V ?Outputdrive,IO=200mA(typical) ?Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

SIR892DP

N-Channel25-V(D-S)MOSFET

SIR892DP

N-Channel25-V(D-S)MOSFET

SIR892DP

N-Channel25-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?Low-SideMOSFETinSynchronousBuckdc-to-dc Converters -GameMachine

SIS892ADN

N-Channel100V(D-S)MOSFET

SIS892ADN

N-Channel100V(D-S)MOSFET

SIS892DN

N-Channel100V(D-S)MOSFET

SISH892BDN

N-Channel100V(D-S)MOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?100RgandUIStested ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?HighpowerdensityDC/DC ?Synchronousrectification ?LEDLighting