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HM6N90

ATXPower,LEDPower

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ISCF6N90C

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrentID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max) ·100AvalancheTested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highcurrent,highspeedswi

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH6N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH6N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH6N90

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM6N90

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM6N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXTH6N90

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH6N90

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH6N90A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQPF6N90C

  • 功能描述：

    MOSFET 900V N-Ch Q-FET advance C-Series

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
仙童
13+
T0-220F
10000
深圳市勤思達(dá)科技有限公司主營(yíng)仙童系列全新原裝正品,公司現(xiàn)貨供應(yīng)FQPF6N90C,歡迎咨詢(xún)洽談。
 詢(xún)價(jià)
ONSEMI/安森美
25+
TO-220F
90000
ONSEMI/安森美全新特價(jià)FQPF6N90C即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
 詢(xún)價(jià)
FAIRCHILD原裝正品價(jià)格
23+
TO-220F
35000
專(zhuān)注原裝正品現(xiàn)貨特價(jià)中量大可定
 詢(xún)價(jià)
FAIRCHILD
23+
TO-220F
1896
公司優(yōu)勢(shì)庫(kù)存熱賣(mài)全新原裝!歡迎來(lái)電
 詢(xún)價(jià)
FAIRCHI
16
TO-220F
6000
原裝正品現(xiàn)貨
 詢(xún)價(jià)
FAIRCHILD
23+
TO-220F
65400
詢(xún)價(jià)
ONSEMI
18+ROHS
NA
8000
全新原裝!優(yōu)勢(shì)庫(kù)存熱賣(mài)中!
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FAIRCHILD
21+
TO-220F
6880
只做原裝,質(zhì)量保證
 詢(xún)價(jià)
FAIRCHILD
21/22+
TO-220
23584
原裝正品現(xiàn)貨實(shí)單價(jià)優(yōu)
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onsemi/安森美
22+
原裝封裝
1000
品質(zhì)保證,信譽(yù)至上
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更多FQPF6N90C供應(yīng)商 更新時(shí)間2025-7-24 11:04:00

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