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FQU2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

600VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

N-ChannelQFETMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,an

KERSEMI

Kersemi Electronic Co., Ltd.

FQU2N60C

N-ChannelQFET?MOSFET600V,1.9A,4.7廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FQU2N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQU2N60CTU

LowGateCharge(Typ.8.5nC)

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60CTU

N-ChannelQFET?MOSFET600V,1.9A,4.7廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQP2N60C

  • 功能描述：

    MOSFET 600V N-Channel Advance Q-FET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
TO220
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
FAIRCHILD/仙童
25+
TO-220
45000
FAIRCHILD/仙童全新現(xiàn)貨FQP2N60C即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂
 詢價(jià)
FAIRCHILD
23+
TO-220
65400
詢價(jià)
FSC
14+無(wú)鉛
TO-220
25700
優(yōu)勢(shì)產(chǎn)品,博盛微熱賣!!!
 詢價(jià)
onsemi(安森美)
24+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ON/安森美
2410+
TO-220
30
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
11+
9862
詢價(jià)
FSC
24+
原廠封裝
20000
原裝現(xiàn)貨假一罰十
 詢價(jià)
FSC
17+
TO-220
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
FAIRCHIL
2015+
TO-220
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
更多FQP2N60C供應(yīng)商 更新時(shí)間2025-7-27 11:04:00

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