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FQP13N10L

功率 MOSFET，N 溝道，邏輯電平，QFET?，100 V，12.8 A，180 mΩ，TO-220; ?12.8A, 100V, RDS(on)= 180mΩ（最大值）@VGS = 10 V, ID = 6.4A柵極電荷低（典型值：8.7nC)\n?低 Crss（典型值20pF)\n?100% 經(jīng)過雪崩擊穿測試\n?175°C最大結(jié)溫額定值\"\n? 175°C maximum junction temperature rating\n;

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機控制和可變開關(guān)電源應(yīng)用。

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FQP13N10L

100V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP13N10L

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQPF13N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.7A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQPF13N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF13N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF13N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.7A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU13N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU13N10

100VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU13N10

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    100

  • VGS Max (V)：

    ±20

  • VGS(th) Max (V)：

    2

  • ID Max (A)：

    12.8

  • PD Max (W)：

    65

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    200

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    180

  • Qg Typ @ VGS = 10 V (nC)：

    8.7

  • Ciss Typ (pF)：

    400

  • Package Type：

    TO-220-3

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
22+
TO-220
3825
原裝正品
 詢價
ON/安森美
24+
TO-220
10048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價
FAIRCHIL
2015+
TO-220
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
仙童
06+
TO-220
5000
原裝庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ONSemiconductor
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
FAIRCHILD/仙童
20+
原裝
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ON
20+
SMD
11520
特價全新原裝公司現(xiàn)貨
 詢價
ON
24+
NA
65300
一級代理/放心采購
 詢價
更多FQP13N10L供應(yīng)商 更新時間2025-7-27 15:38:00

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