零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
55VN-ChannelMOSFET Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF |
詳細參數
- 型號:
FJV4105R
- 制造商:
FAIRCHILD
- 制造商全稱:
Fairchild Semiconductor
- 功能描述:
PNP Epitaxial Silicon Transistor
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FAIRCHILD/FSC/仙童飛兆半 |
24+ |
SOT-23 |
45200 |
新進庫存/原裝 |
詢價 | ||
ON/安森美 |
24+ |
SOT-23 |
9600 |
原裝現貨,優(yōu)勢供應,支持實單! |
詢價 | ||
ON/安森美 |
23+ |
SOT-23 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
ON/安森美 |
20+ |
SOT-23 |
120000 |
只做原裝 可免費提供樣品 |
詢價 | ||
ON Semiconductor |
2022+ |
SOT-23-3(TO-236) |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
FAI |
23+ |
SOT-23 |
63623 |
##公司主營品牌長期供應100%原裝現貨可含稅提供技術 |
詢價 | ||
Fairchild |
23+ |
33500 |
詢價 | ||||
ON/安森美 |
24+ |
NA/ |
6250 |
原裝現貨,當天可交貨,原型號開票 |
詢價 | ||
ON/安森美 |
23+ |
SOT-23 |
50000 |
原裝正品 支持實單 |
詢價 |
相關規(guī)格書
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相關庫存
更多- FK11C0G1H223J
- FK11C0G1H473J
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- FK14X5R0J475K
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