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首頁>IRFR4105PBF>規(guī)格書詳情

IRFR4105PBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR4105PBF
廠商型號(hào)

IRFR4105PBF

功能描述

Ultra Low On-Resistance

文件大小

3.84791 Mbytes

頁面數(shù)量

10

生產(chǎn)廠商

KERSEMI

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-8-16 20:22:00

人工找貨

IRFR4105PBF價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

IRFR4105PBF規(guī)格書詳情

描述 Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance

● Surface Mount (IRFR4105)

● Straight Lead (IRFU4105)

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRFR4105PBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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24+
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