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功率MOS/高壓功率MOS

First

福斯特

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：734.41 Kbytes 頁數(shù)：8 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：362.54 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel QFET? MOSFET 500 V, 24 A, 200 mΩ

Features ? 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A ? Low Gate Charge (Typ. 90 nC) ? Low Crss (Typ. 55 pF) ? 100% Avalanche Tested ? RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar

文件：1.63157 Mbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

JAE
SMD

JAEJapan Aviation Electronics Industry, Ltd.

航空電子日本航空電子工業(yè)株式會社

上傳：深圳市羿芯誠電子有限公司