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IKW20N60T

IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60TA

DesignedforDC/ACconvertersforAutomotiveApplication

LowLossDuoPack:IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ?AutomotiveAECQ101qualified ?DesignedforDC/ACconvertersforAutomotiveApplication ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP20N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤220m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDP20N60B

HighVoltageIGBTwithoptionalDiode

VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr

IXYS

IXYS Corporation

IXFH20N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH20N60

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N60Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS

IXYS

IXYS Corporation

IXFH20N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

技術(shù)參數(shù)

  • ID_Tc=25℃：

    20

  • ID_Tc=100℃：

    13

  • VGS(V)：

    ±30

  • MIN(V)：

    2

  • MAX(V)：

    4

  • at Vgs=10V_Tpy：

    0.36

  • at Vgs=10V_Max：

    0.45

  • Type：

    N

  • Package：

    TO-220F

供應(yīng)商型號品牌批號封裝庫存備注價格
FIRST/福斯特
2022+
TO-220F
50000
原廠代理 終端免費提供樣品
 詢價
FIRST/福斯特
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對原裝 假一罰十
 詢價
FIRST/福斯特
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
FIRST/福斯特
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FIRST(福斯特)
2447
TO-220F(TO-220IS)
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
FIRST福斯特
23+
TO-220F(TO-220IS)
22820
原裝正品，支持實單
 詢價
FIRST(福斯特)
20+
TO-220F-3
50
詢價
24+
N/A
76000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
FIRST/福斯特
23+
TO-TO-220F
92299
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
First
25+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多FIR20N60FG供應(yīng)商 更新時間2025-7-28 14:02:00

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