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FFSH2065A

SiC 二極管 - 650V，20A; ? Max Junction Temperature 175 °C\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065A

Marking：FFSH2065A；Package：TO247-2L；Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065A

Package：TO-247-2；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：650V 20A SIC SBD

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065ADN

SiC Diode, 650V, 20A, TO-247-3, Common Cathode; ? Max Junction Temperature 175 °C\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065ADN-F155

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-3L; ? High Surge Current Capacity\n? Avalanche Rated 64 mJ\n? Max Junction Temperature 175 °C\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065ADN-F155

Marking：FFSH2065ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065ADN-F155

Package：TO-247-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：650V 20A SIC SBD

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    FFSH2065A

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    管件

  • 二極管類型：

    碳化硅肖特基

  • 電流 - 平均整流 (Io)：

    25A

  • 速度：

    無(wú)恢復(fù)時(shí)間 > 500mA（Io）

  • 不同?Vr、F 時(shí)電容：

    1085pF @ 1V，100kHz

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-2

  • 供應(yīng)商器件封裝：

    TO-247-2

  • 工作溫度 - 結(jié)：

    -55°C ~ 175°C

  • 描述：

    650V 20A SIC SBD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ON(安森美)
2447
TO-247-3
315000
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON/安森美
22+
TO-247
6000
十年配單,只做原裝
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
ON Semiconductor
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
ON/安森美
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
onsemi(安森美)
24+
TO2472
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
ON/安森美
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
ST
2405+
原廠封裝
50000
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83271599鄒小姐
 詢價(jià)
更多FFSH2065A供應(yīng)商 更新時(shí)間2025-7-28 11:08:00

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