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FFSH2065ADN

SiC Diode, 650V, 20A, TO-247-3, Common Cathode; ? Max Junction Temperature 175 °C\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSH2065ADN-F155

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-3L; ? High Surge Current Capacity\n? Avalanche Rated 64 mJ\n? Max Junction Temperature 175 °C\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSH2065ADN-F155

絲?。?strong>FFSH2065ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

FFSH2065ADN-F155

Package：TO-247-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 二極管 - 整流器 - 單 描述：650V 20A SIC SBD

FFSH2065BDN

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

FFSM2065B

SiliconCarbideSchottkyDiode

FFSP2065A

SiliconCarbideSchottkyDiode650V,20A

FFSP2065B

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-220-2L

Features ?MaxJunctionTemperature175°C ?AvalancheRated94mJ ?HighSurgeCurrentCapacity ?PositiveTemperatureCoefficient ?EaseofParalleling ?NoReverseRecovery/NoForwardRecovery ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant Applications ?

FFSPF2065A

SiCSchottkyBarrierDiode

FEATURES ·HighSurgeCurrentCapacity ·NoReverseRecovery/NoForwardRecovery ·EaseofParalleling ·NoReverseRecovery APPLICATIONS ·GeneralPurpose ·SMPS,SolarInverter,UPS ·PowerSwitchingCircuits

HIC2065

VoltageRepeater