描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.

特性 Features

? Max Junction Temperature 175°C
? AEC?Q101 qualified and PPAP Capable
? Avalanche Rated 200 mJ
? No Reverse Recovery/No Forward Recovery
? Ease of Paralleling
? High Surge Current Capacity
? Positive Temperature Coefficient

應(yīng)用 Application

? Automotive HEV?EV Onboard Chargers
? Automotive HEV?EV DC?DC Converters

簡(jiǎn)介

FFSB10120A-F085屬于分立半導(dǎo)體產(chǎn)品的二極管-整流器-單。由制造生產(chǎn)的FFSB10120A-F085二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個(gè)方向流動(dòng)，并且每個(gè)器件封裝都恰好實(shí)現(xiàn)該功能的一個(gè)實(shí)例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨(dú)列在各自的產(chǎn)品系列中，每個(gè)器件封裝中包含多個(gè)二極管的產(chǎn)品也是如此。