描述 Description

IHV A 3300 V, 400 A?130 mm dual IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications.
Also available as 200 A half bridge module:?FF200R33KF2C

特性 Features

? High reliability and robust module construction

優(yōu)勢:
? High power density for compact inverter designs
? Standardized housing

簡介

FF400R33KF2C屬于分立半導體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的FF400R33KF2C晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導體器件，主要用作電子開關，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。