描述 Description

EconoDUAL? 3?1200 V, 300 A half-bridge dual IGBT module with low sat and fast TRENCHSTOP? IGBT4, Emitter Controlled HE diode and NTC.?Also available as variation with PressFIT mounting technology:?FF300R12ME4_B11

特性 Features

? Low VCEsat
? Tvj op = 150°C
? Standard housing

優(yōu)勢:
? Compact modules
? Easy and most reliable assembly
? No plugs and cables required
? Ideal for low inductive system designs

簡介

FF300R12ME4屬于分立半導體產品的晶體管-IGBT-模塊。由制造生產的FF300R12ME4晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導體器件，主要用作電子開關，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。