描述 Description

The half-bridge?62 mm 1200 V, 300 A Common Emitter IGBT modules is the right choice for your design. This IGBT module is equipped with a fast TRENCHSTOP? IGBT3 and Emitter Controlled diode. The 3-level phase leg configurations are possible in combination with a second 62 mm half-bridge module (e.g. FF300R12KT3).
This product is also available with Thermal Interface Material pre-applied: FF300R12KT3P_E

特性 Features

? Superior solution for frequency controlled inverter drives
? UL/CSA Certification with UL1557 E83336
? Operating temperature up to 125°C (max 150°C)
? Optimized switching characteristic like softness and reduced switching losses
? Existing packages with higher current capability
? RoHS compliant

優(yōu)勢(shì):
? Flexibility
? Optimal electrical performance
? Highest reliability

簡介

FF300R12KT3_E屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的FF300R12KT3_E晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對(duì)稱式橋； 升壓、降壓和制動(dòng)斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。