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型號：2N7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.20175 Mbytes 頁數(shù)：5 Pages

雷卯電子

型號：AP66200FVBW-13；Package：U-QFN4040-16/SWP；3.8V TO 60V INPUT, 2A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features - VIN 3.8 to 60V - 2A Continuous Output Current - VOUT Adjustable from 0.8V to 50V - Enhanced Efficiency Mode with Bias - Adjustable Switching Frequency. 500kHz Default Frequency - Start-up with Pre-biased Output - External Soft-Start with Tracking – Sequential, Ratiometric, or Ab

文件：2.18029 Mbytes 頁數(shù)：26 Pages

美臺半導體

型號：BAS21AW；Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes High Voltage Switching Diodes

文件：510.99 Kbytes 頁數(shù)：2 Pages

先之科半導體

型號：BC846AQB；Package：DFN1110D-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits ? High power dissipation capability ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? Smaller footprint compared to conventional leaded SMD packages ? Low package height of 0.5 mm

文件：229.4 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：BC846AQB-Q；Package：DFN1110D-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits ? High power dissipation capability ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? Smaller footprint compared to conventional leaded SMD packages ? Low package height of 0.5 mm ? Qualified according to AEC-Q101 and recommended for use in automotive a

文件：230.09 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：BCM846BS；Package：TSSOP6；NPN/NPN matched double transistor

General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Features and benefits ? Current gain matching ? Base-emitter voltage matching ? Drop-in replacement for standard d

文件：687.56 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：BCM846BS-Q；Package：TSSOP6；NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits ? Current gain matching ? Base-emitter voltage matching ? Drop-in replacement for s

文件：237.25 Kbytes 頁數(shù)：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：BFS19；Package：SOT23；NPN medium frequency transistor

FEATURES ?IC(max) = 25 mA ?VCEO(max) = 20 V. APPLICATIONS ?Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

文件：284.4 Kbytes 頁數(shù)：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：BQ29704DSER；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 頁數(shù)：34 Pages

德州儀器

型號：BQ29704DSET；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 頁數(shù)：34 Pages

德州儀器