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F2

型號:2N7002;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件:1.20175 Mbytes 頁數(shù):5 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LEIDITECH

F2

型號:AP66200FVBW-13;Package:U-QFN4040-16/SWP;3.8V TO 60V INPUT, 2A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features - VIN 3.8 to 60V - 2A Continuous Output Current - VOUT Adjustable from 0.8V to 50V - Enhanced Efficiency Mode with Bias - Adjustable Switching Frequency. 500kHz Default Frequency - Start-up with Pre-biased Output - External Soft-Start with Tracking – Sequential, Ratiometric, or Ab

文件:2.18029 Mbytes 頁數(shù):26 Pages

DIODESDiodes Incorporated

美臺半導(dǎo)體

DIODES

F2

型號:BAS21AW;Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes High Voltage Switching Diodes

文件:510.99 Kbytes 頁數(shù):2 Pages

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

F2

型號:BC846AQB;Package:DFN1110D-3;65 V, 100 mA NPN general-purpose transistor

Features and benefits ? High power dissipation capability ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? Smaller footprint compared to conventional leaded SMD packages ? Low package height of 0.5 mm

文件:229.4 Kbytes 頁數(shù):12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NEXPERIA

F2

型號:BC846AQB-Q;Package:DFN1110D-3;65 V, 100 mA NPN general-purpose transistor

Features and benefits ? High power dissipation capability ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? Smaller footprint compared to conventional leaded SMD packages ? Low package height of 0.5 mm ? Qualified according to AEC-Q101 and recommended for use in automotive a

文件:230.09 Kbytes 頁數(shù):12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NEXPERIA

F2

型號:BCM846BS;Package:TSSOP6;NPN/NPN matched double transistor

General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Features and benefits ? Current gain matching ? Base-emitter voltage matching ? Drop-in replacement for standard d

文件:687.56 Kbytes 頁數(shù):12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NEXPERIA

F2

型號:BCM846BS-Q;Package:TSSOP6;NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits ? Current gain matching ? Base-emitter voltage matching ? Drop-in replacement for s

文件:237.25 Kbytes 頁數(shù):9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NEXPERIA

F2

型號:BFS19;Package:SOT23;NPN medium frequency transistor

FEATURES ?IC(max) = 25 mA ?VCEO(max) = 20 V. APPLICATIONS ?Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

文件:284.4 Kbytes 頁數(shù):8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NEXPERIA

F2

型號:BQ29704DSER;Package:WSON;BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件:1.44954 Mbytes 頁數(shù):34 Pages

TI1Texas Instruments

德州儀器美國德州儀器公司

TI1

F2

型號:BQ29704DSET;Package:WSON;BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件:1.44954 Mbytes 頁數(shù):34 Pages

TI1Texas Instruments

德州儀器美國德州儀器公司

TI1

詳細(xì)參數(shù)

  • 型號:

    F2

  • 功能描述:

    穩(wěn)壓二極管 8.2V 0.5W Zener

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 齊納電壓:

    12 V

  • 電壓容差:

    5 %

  • 電壓溫度系數(shù):

    0.075 %/K

  • 功率耗散:

    3 W

  • 最大反向漏泄電流:

    3 uA

  • 最大齊納阻抗:

    7 Ohms

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    DO-214AC

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
SUNMATE(森美特)
2019+ROHS
SOD-123
66688
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣
詢價
GE
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
長電/長晶
25+
SOD-123
1664
詢價
24+
5000
公司存貨
詢價
DISCRETE
3000
DIO
183000
詢價
ON
24+/25+
22930
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
MOT
06+
原廠原裝
50051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
ON
23+
原廠封裝
9896
詢價
ON
SOD123
120
正品原裝--自家現(xiàn)貨-實(shí)單可談
詢價
DIODES
17+
SOD123
6200
100%原裝正品現(xiàn)貨
詢價
更多F2供應(yīng)商 更新時間2025-8-5 16:00:00