描述 Description

EFC4K110NUZTDG features a ultra low on?state resistance and high current with small and thin CSP package. It is best suited for 1?2 Cells lithium?ion battery protection circuit.

特性 Features

? Low Rss(on)
? Low power consumption
? Small size and narrow width
? It can be mounted on narrow width and small area board
? No latch up phenomenon
? High durability when abnormal high voltage input
? Low Gate Charge
? Ease of drive, faster turn-on
? 2kV ESD HBM
? Common Drain Type
? ESD Diode-protected Gate
? RoHS compliance

應(yīng)用 Application

? 1?2 Cells Lithium?ion Battery Charging and Discharging Switch in battery protection circuit
? Smartphone
? Tablet
? Portable equipment

簡(jiǎn)介

EFC4K110NUZTDG屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-陣列。由制造生產(chǎn)的EFC4K110NUZTDG晶體管 - FET，MOSFET - 陣列場(chǎng)效應(yīng)晶體管 (FET) 是使用電場(chǎng)控制電流流動(dòng)的電子器件。向柵極端子施加電壓會(huì)改變漏極端子和源極端子之間的電導(dǎo)率。FET 也稱(chēng)為單極型晶體管，因?yàn)槠渖婕皢屋d流子類(lèi)型的操作。也就是說(shuō)，F(xiàn)ET 在操作中使用電子或空穴作為載流子，而不是同時(shí)使用兩者。場(chǎng)效應(yīng)晶體管通常在低頻下顯示出極高的輸入阻抗。