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首頁(yè) >EAI-I131C>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州儀器美國(guó)德州儀器公司

INA131AP.A

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州儀器美國(guó)德州儀器公司

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州儀器美國(guó)德州儀器公司

INA131BP.A

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州儀器美國(guó)德州儀器公司

IRF131

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF131

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
2000
2700
詢(xún)價(jià)
Everlight Electronics Co Ltd
30000
詢(xún)價(jià)
24+
N/A
65000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢(xún)價(jià)
EVERLIGHT/億光
23+
DIPSMD
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢(xún)價(jià)
更多EAI-I131C供應(yīng)商 更新時(shí)間2025-7-25 8:01:00