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絲?。?a target="_blank" title="Marking" href="/ina131bp/marking.html">INA131BP；Package：PDIP；Precision G = 100 INSTRUMENTATION AMPLIFIER

FEATURES LOW OFFSET VOLTAGE: 50mV max LOW DRIFT: 0.25mV/°C max LOW INPUT BIAS CURRENT: 2nA max HIGH COMMON-MODE REJECTION: 110dB min INPUT OVERVOLTAGE PROTECTION: ±40V WIDE SUPPLY RANGE: ±2.25 to ±18V LOW QUIESCENT CURRENT: 3mA 8-PIN PLASTIC DIP APPLICATIONS BRIDGE AMPLIFIER THERMOC

文件：222.04 Kbytes 頁數(shù)：13 Pages

TI

德州儀器

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：211.72 Kbytes 頁數(shù)：5 Pages

Samsung

三星

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：180.59 Kbytes 頁數(shù)：6 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

N-Channel MOSFET Transistor

文件：198.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TI
DIP

TI

德州儀器

上傳：深圳市河鋒鑫科技有限公司