描述 Description

The DS2227 combines voltage monitoring circuitry with lithium-backed memory in a flexible architecture that can be accessed as 128k x 32, 256k x 16, or 512k x 8 bits.
Using precise comparators, the DS2227 monitors incoming Vcc for an out-or-tolerance condition. When such a condition occurs, the internal lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
While the DS2227 is used like a standard static RAM, it can be flexibly configured by virtue of separate read, write, and chip-select bits for each of the four memory banks.
Dallas' nonvolatile memory chips are known throughout the industry for low-power consumption. They render data nonvolatile for greater than 10 years in the absence of power, greater than the useful like of the associated equipment.

特性 Features

? Memory with flexible architecture:
? 128k x 32
? 256k x 16
? 512k x 8
? NV circuitry transparent to/independent of host
? Automatic write protection circuitry
? Separate chip-enables for access by byte, word, or long word
? Access times: 70ns, 100ns, or 120ns
? Unlimited write cycles
? Equal read/write cycle times
? JEDEC-standard 72-position SIMM connection
? Lithium source with freshness seal
? Operating ranges:
? 5V±10% tolerance
? 0°C to 70°C

簡(jiǎn)介

DS2227屬于集成電路（IC）的存儲(chǔ)器。由制造生產(chǎn)的DS2227存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。