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DS1245WP-150

3.3V 1024k Nonvolatile SRAM

DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha

DS1245WP-150-IND

3.3V 1024k Nonvolatile SRAM

DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha

DS1245Y

1024k Nonvolatile SRAM

DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc

DS1245Y

1024k非易失SRAM; ? 在沒有外部電源的情況下最少可以保存數(shù)據(jù)10年\n? 掉電期間數(shù)據(jù)被自動保護\n? 替代128k x 8易失靜態(tài)RAM、EEPROM或閃存\n? 沒有寫次數(shù)限制\n? 低功耗CMOS\n? 70ns的讀寫存取時間 \n? 第一次上電前，鋰電池與電路斷開、維持保鮮狀態(tài)\n? ±10% VCC工作范圍(DS1245Y) \n? 可選擇±5% VCC工作范圍(DS1245AB)\n? 可選的工業(yè)級溫度范圍為-40°C至+85°C，指定為IND\n? JEDEC標準的32引腳DIP封裝 \n? PowerCap模塊(PCM)封裝\n? 表面貼裝模塊\n? 可更換的即時安裝PowerCap提供備份鋰電池 \n? 所有非易失SRAM器件提供標準引腳 \n? 分離的PowerCap用常規(guī)的螺絲起子便可方便拆卸;

DS1245 1024k非易失(NV) SRAM為1,048,576位、完全靜態(tài)的非易失SRAM，按照8位、131,072字排列。每個NV SRAM均自帶鋰電池及控制電路，控制電路連續(xù)監(jiān)視VCC是否超出容差范圍，一旦超出容差范圍，鋰電池便自動切換至供電狀態(tài)、寫保護將無條件使能、防止數(shù)據(jù)被破壞。DIP封裝的DS1245器件可以用來替代現(xiàn)有的128k x 8靜態(tài)RAM，符合通用的單字節(jié)寬、32引腳DIP標準。PowerCap模塊封裝的DS1245器件可以直接表面貼安裝、通常與DS9034PC PowerCap配合構(gòu)成一個完整的非易失SRAM模塊。該器件沒有寫次數(shù)限制，可直接與微處理器接口、不需要額外的支持電路。\n\n

DS1245Y-100

1024k Nonvolatile SRAM

DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc

DS1245Y-120

1024k Nonvolatile SRAM

DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc

DS1245Y-70

1024k Nonvolatile SRAM

DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc

DS1245Y-85

1024k Nonvolatile SRAM

DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc

DS1245YL

1024K Nonvolatile SRAM

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DS1245YL-100

1024K Nonvolatile SRAM

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