Functional Description[1]

The CY7C1340G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).

特性 Features

? Registered inputs and outputs for pipelined operation

? Optimal for performance (Double-Cycle deselect)

— Depth expansion without wait state

? 128K × 32 common I/O architecture

? 3.3V core power supply (VDD)

? 3.3V / 2.5V I/O power supply (VDDQ)

? Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

? Provide high-performance 3-1-1-1 access rate

? User-selectable burst counter supporting Intel? Pentium? interleaved or linear burst sequences

? Separate processor and controller address strobes

? Synchronous self-timed writes

? Asynchronous Output Enable

? Available in lead-free 100-Pin TQFP package

? “ZZ” Sleep Mode option