Functional Description[1]

The CY7C1218H SRAM integrates 32K x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.

特性 Features

? Registered inputs and outputs for pipelined operation

? 32K × 36 common I/O architecture

? 3.3V core power supply (VDD)

? 2.5V/3.3V I/O power supply (VDDQ)

? Fast clock-to-output times

— 3.5 ns (for 166-MHz device)

? Provide high-performance 3-1-1-1 access rate

? User-selectable burst counter supporting Intel? Pentium interleaved or linear burst sequences

? Separate processor and controller address strobes

? Synchronous self-timed write

? Asynchronous output enable

? Available in JEDEC-standard lead-free 100-Pin TQFP package

? “ZZ” Sleep Mode Option